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Preliminary
SemiWell Semiconductor Sensitive Gate Triacs
Symbol
BT236-D
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 6 A ) High Commutation dv/dt Sensitive Gate Triggering 4 Mode Non-isolated Type

2.T2

3.Gate
1.T1
General Description
This device is sensitive gate triac suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, AC switching applications, phase control application such as fan speed, light controllers and home appliance equipment.
TO-220
1 2 3
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG
( TJ = 25C unless otherwise specified ) Condition
Sine wave, 50 to 60 Hz, Gate open TC =101 C, Full Sine wave One Cycle, 50Hz/60Hz, Peak, Non-Repetitive tp = 10ms TC = 101 C, Pulse width 1.0us Over any 20ms period tp = 20us, TJ=125C tp = 20us, TJ=125C
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for Fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature
Ratings
600 6.0 60/66 18 3.0 0.3 2.0 10 - 40 ~ 125 - 40 ~ 150
Units
V A A A 2s W W A V C C
Mar, 2004. Rev. 0
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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BT236-D
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage Gate Trigger Current I -GT3 I+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Rth(j-a) Gate Trigger Voltage Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Thermal Impedance Junction to case Junction to Ambient TJ = 125 C, VD = 1/2 VDRM TJ = 125 C, [di/dt]c = -0.5 A/ms, VD=2/3 VDRM VD = 6 V, RL=10 0.2 5 1.6 1.4 2.0 10 2.8 60 V VD = 6 V, RL=10 8 5 12 1.4 1.4 V
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 C IT = 8 A, Inst. Measurement
Ratings Min.

Typ.

Max.
1.0 1.6 5 5
Unit
IDRM VTM I+GT1 I -GT1
mA V
mA
V/
mA C/W C/W
Notes : 1. Pulse Width 300us , Duty cycle 2%
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BT236-D
Fig 1. Gate Characteristics
10
10
1
Fig 2. On-State Voltage
2
VGM (10V) PGM (3W)
PG(AV) (0.3W) 25 I+GT3 25 I+GT1 I -GT1 I -GT3 VGD(0.2V)
10
-1
On-State Current [A]
Gate Voltage [V]
10
1
TJ = 125 C
o
IGM (2A)
10
0
TJ = 25 C
10
0
o
10
0
10
1
10
2
10
3
10
4
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
Allowable Case Temperature [ oC]
10 9
Fig 4. On State Current vs. Allowable Case Temperature
130
Power Dissipation [W]
8 7

360
2
= 180 o = 150 = 120 = 90
o o o o
o
120
6 5 4 3 2 1 0 0
: Conduction Angle
= 60 = 30
110
2
= 30 = 60 = 90
o o o o
360
100
: Conduction Angle
= 120 o = 150 o = 180
3 4 5 6 7
1
2
3
4
5
6
7
8
0
1
2
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
80 70
Fig 6. Gate Trigger Voltage vs. Junction Temperature
10
3
Surge On-State Current [A]
60Hz
50 40 30 20 10 0 0 10
o
X 100 (%)
60
V
V GT1
10
2
+ GT1 -
V GT3
50Hz
VGT (25 C)
VGT (t C)
o
V
1
+ GT3
10
1
10
2
10
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/5
BT236-D
Fig 7. Gate Trigger Current vs. Junction Temperature
10
3
Fig 8. Transient Thermal Impedance
10
I
10
2
+ GT1 GT1 GT3
I I
Transient Thermal Impedance [ C/W]
IGT (25 C)
IGT (t C)
o
o
X 100 (%)
o
1
I
10
1
+ GT3
-50
0
50
100
o
150
10
-2
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10
10

6V

A

A
6V
6V
A

RG
6V
A
V
RG
V
RG
V
V
RG
Test Procedure
Test Procedure
Test Procedure
Test Procedure
4/5
BT236-D
TO-220 Package Dimension
Dim. A B C D E F G H I J K L M N O
Min. 9.7 6.3 9.0 12.8 1.2
mm Typ.
Max. 10.1 6.7 9.47 13.3 1.4
Min. 0.382 0.248 0.354 0.504 0.047
Inch Typ.
Max. 0.398 0.264 0.373 0.524 0.055
1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024
0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142
E B
A
H
I
F
C M
G 1 D 2 3
L
1. T1 2. T2 3. Gate
N O
J K
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